- 型摻雜
- type: n. 1.型，類型，(工業(yè)產(chǎn)品的)品種；風(fēng)格，型式。 2 ...
- dope: n. 1.濃液，黏稠物，膠狀物；【航空】(涂機(jī)翼的)明膠 ...
- doping type: 摻雜型
- n type doping: n 型摻雜; 型摻雜
- p type doping: p 型摻雜
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type doping中文什么意思
- 型摻雜
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例句與用法
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- In this paper we mainly study preparation , properties and n - type doping of cubic boron nitride thin films
本文主要研究立方氮化硼的制備、性質(zhì)和n型摻雜等內(nèi)容。 - High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap襯底上，本征型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質(zhì)量的單晶外延薄膜。 - The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
6文章還對立方氨化硼薄膜的成核和生長機(jī)理，氮化硼薄膜的n型摻雜機(jī)制和bn型）侶i …型）異質(zhì)結(jié)的電流輸運機(jī)制進(jìn)行了探討。 - The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type . the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
本論文的主要內(nèi)容和結(jié)果如下: ( 1 )借用“熱中子輻照硅片使部分硅嬗變?yōu)榱?從而將硅摻雜成n型”的思想,從質(zhì)子嬗變角度討論了實現(xiàn)zno材料的p型摻雜方案。 - It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated . the particle distributions of s , s + and ar + are gotten . the result has important reference to the investigation of n - type diamond film doping at low temperature
( 3 )對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學(xué)過程進(jìn)行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數(shù)分布，計算結(jié)果對摻雜過程的研究有重要的參考價值。